HVLED001B datasheet(12/33 Pages) STMICROELECTRONICS

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Electrical characteristics

HVLED001B

12/33

DS12748 Rev 2

Twait

ZCD

ZCD waiting time after

TBLANK elapse

4.6

6.5

μs

VZCD,cl_l

ZCD

ZCD negative clamping

voltage

IZCD src = 1 mA

-230

-100

IZCDb

ZCD ZCD pin biasing current VZCD = 0.1 to 2.6 V(7)

μA

IBO

ZCD

Brownout detection

level

Sourcing during ON-time

100

125

μA

TBO

ZCD

Brownout detection

time

IZCD < IBO(5)

100

125

Timing

Trec

Recovery time after

Opto failure, Analogue

disable or Brownout

(5)

1.8

2.5

3.2

TSS

Internal time to activate

the timed protections

After first startup(5)

0.6

0.85

1.1

Gate driver

VGDH

Output high voltage

IGD,source = 5 mA

14.5

VGDL

Output low voltage

IGD,sink = 5 mA

0.1

Isource

Output source peak

current

VGD = 7.5 V(7)

0.48

0.66

Isink

Output sink peak

current

VGD = 7.5 V(7)

0.83

1.2

Fall time

CGD = 1 nF, from 13.5 V to 1.5 V

Rise time

CGD = 1 nF, from 1.5 V to 13.5 V

VGD,shd

Maximum voltage

during shut-down

VCC < Vcc,shd , IGD = 2 mA

1.5

OPTO input

VOPTO,dis

OPTO Disabling threshold

0.97

1.054

1.11

VOPTO,bias OPTO OPTO biasing voltage

Tamb = 25 °C(3)

3.2

Over whole temp. range(7) (3)

2.9

IOPTO,bias OPTO OPTO biasing current

VOPTO = 0 V

110

148

185

μA

ROPTO

OPTO Internal parallel resistor



TOFF characteristics

VTOFF,fix

TOFF

Minimum fixed TBLANK

voltage

(7)

-2

koff

TOFF

TOFF characteristic

slope

(7) (9)

-40

μs/

Table 6. Electrical characteristics (continued)

Symbol

Parameter

Test condition

Min.

Typ.

Max. Unit

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