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STP26N65DM2 数据表(PDF) 5 Page - STMicroelectronics

部件名 STP26N65DM2
功能描述  N-channel 650 V, 0.156 Ω typ., 20 A, MDmesh™ DM2 Power MOSFET in a TO-220 package
PDF  13 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP26N65DM2 数据表(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GADG110620181355SOA
10 2
10 1
10 0
10 -1
10 -1
10 0
10 1
10 2
10 3
ID
(A)
VDS (V)
tp =10 µs
tp =100 µs
tp =1 ms
tp =10 ms
Single pulse,
TC = 25 °C, TJ ≤ 150 °C
Operation in this area
is limited by RDS(on)
tp = 1 μs
Figure 2. Thermal impedance
Figure 3. Output characteristics
GIPG201220170957OCH
50
40
30
20
10
0
0
5
10
15
20
ID
(A)
VDS (V)
VGS = 5 V
VGS = 6 V
VGS = 7 V
VGS = 8, 9, 10 V
Figure 4. Transfer characteristics
GIPG201220170957TCH
50
40
30
20
10
0
3
4
5
6
7
8
ID
(A)
VGS (V)
VDS = 20 V
Figure 5. Gate charge vs gate-source voltage
GIPG201220170958QVG
12
10
8
6
4
2
0
600
500
400
300
200
100
0
0
6
12
18
24
30
36
VGS
(V)
VDS
(V)
Qg (nC)
VDD = 520 V
ID = 20 A
VDS
Figure 6. Static drain-source on-resistance
GIPG201220170955RID
0.168
0.164
0.160
0.156
0.152
0.148
0.144
0
4
8
12
16
20
RDS(on)
(Ω)
ID (A)
VGS =10 V
STP26N65DM2
Electrical characteristics (curves)
DS12621 - Rev 1
page 5/13



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