| 数据搜索系统,热门电子元器件搜索 |
|
STP26N65DM2 数据表(PDF) 1 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STP26N65DM2 数据表(HTML) 1 Page - STMicroelectronics |
|
1 / 13 page ![]() 1 2 3 TO-220 TAB D(2, TAB) G(1) S(3) AM01475V1 Features Order code VDS RDS(on) max. ID PTOT STP26N65DM2 650 V 0.190 Ω 20 A 170 W • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast- recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status link STP26N65DM2 Product summary Order code STP26N65DM2 Marking 26N65DM2 Package TO-220 Packing Tube N-channel 650 V, 0.156 Ω typ., 20 A, MDmesh™ DM2 Power MOSFET in a TO-220 package STP26N65DM2 Datasheet DS12621 - Rev 1 - July 2018 For further information contact your local STMicroelectronics sales office. www.st.com |
类似零件编号 - STP26N65DM2 |
|
类似说明 - STP26N65DM2 |
|
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |