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STP26N65DM2 数据表(PDF) 6 Page - STMicroelectronics

部件名 STP26N65DM2
功能描述  N-channel 650 V, 0.156 Ω typ., 20 A, MDmesh™ DM2 Power MOSFET in a TO-220 package
PDF  13 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP26N65DM2 数据表(HTML) 6 Page - STMicroelectronics

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Figure 7. Capacitance variations
GIPG201220170957CVR
10 4
10 3
10 2
10 1
10 0
10 -1
10 0
10 1
10 2
C
(pF)
VDS (V)
CISS
COSS
CRSS
f = 1 MHz
Figure 8. Normalized gate threshold voltage vs
temperature
GIPG201220170954VTH
1.1
1.0
0.9
0.8
0.7
0.6
-75
-25
25
75
125
VGS(th)
(norm.)
Tj (°C)
ID = 250 µA
Figure 9. Normalized on-resistance vs temperature
GIPG201220170954RON
2.2
1.8
1.4
1.0
0.6
0.2
-75
-25
25
75
125
RDS(on)
(norm.)
Tj (°C)
VGS = 10 V
Figure 10. Normalized V(BR)DSS vs temperature
GIPG201220170955BDV
1.08
1.04
1.00
0.96
0.92
0.88
-75
-25
25
75
125
V(BR)DSS
(norm.)
Tj (°C)
ID = 1 mA
Figure 11. Output capacitance stored energy
GIPG201220170958EOS
12
10
8
6
4
2
0
0
100 200 300 400 500 600
EOSS
(µJ)
VDS (V)
Figure 12. Source-drain diode forward characteristics
GIPG201220170956SDF
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0
4
8
12
16
20
VSD
(V)
ISD (A)
Tj = -50 °C
Tj = 25 °C
Tj = 150 °C
STP26N65DM2
Electrical characteristics (curves)
DS12621 - Rev 1
page 6/13



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