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STF6N60DM2 数据表(PDF) 6 Page - STMicroelectronics

部件名 STF6N60DM2
功能描述  N-channel 600 V, 0.95 typ., 5 A MDmesh™ DM2 Power MOSFET in a TO-220FP package
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STF6N60DM2 数据表(HTML) 6 Page - STMicroelectronics

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Figure 7. Capacitance variations
GIPD200620171408CVR
10 3
10 2
10 1
10 0
10 -1
10 0
10 1
10 2
C
(pF)
VDS (V)
CISS
COSS
CRSS
Figure 8. Output capacitance stored energy
GIPD270620171145EOS
2
1.6
1.2
0.8
0.4
0
0
100 200 300 400 500 600
EOSS
(µJ)
VDS (V)
Figure 9. Normalized gate threshold voltage vs temperature
GIPD200620171427VTH
1.1
1
0.9
0.8
0.7
0.6
-75
-25
25
75
125
VGS(th)
(norm.)
Tj (°C)
ID = 250 µA
Figure 10. Normalized on-resistance vs temperature
GIPD200620171437RON
2.5
2
1.5
1
0.5
0
-75
-25
25
75
125
RDS(on)
(norm.)
Tj (°C)
VGS = 10 V
Figure 11. Source-drain diode forward characteristics
GIPD200620171441SDF
1.1
1
0.9
0.8
0.7
0.6
0.5
0
1
2
3
4
5
VSD
(V)
ISD (A)
Tj = -50 °C
Tj = 25 °C
Tj = 150 °C
Figure 12. Normalized V(BR)DSS vs temperature
GIPD200620171444VTH
1.1
1.05
1
0.95
0.9
0.85
-75
-25
25
75
125
VGS(th)
(norm.)
Tj (°C)
ID = 1 mA
STF6N60DM2
Electrical characteristics (curves)
DS12220 - Rev 3
page 6/12



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