STF6N60DM2 datasheet(2/12 Pages) STMICROELECTRONICS

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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase = 100 °C

3.2

IDM (1)

Drain current (pulsed)

PTOT

Total power dissipation at Tcase = 25 °C

dv/dt(2)

Peak diode recovery voltage slope

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

VISO

Insulation withstand voltage (RMS) from all three leads to external heat sink

(t = 1 s; TC = 25 °C)

2.5

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

1. Pulse width is limited by safe operating area.

2. ISD ≤ 5 A, di/dt= 900 A/μs; VDS peak < V(BR)DSS, VDD = 480 V.

3. VDS ≤ 480 V.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

6.25

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR (1)

Avalanche current, repetitive or not repetitive

1.7

EAS (2)

Single pulse avalanche energy

132

1. Pulse width limited by Tjmax.

2. starting Tj = 25 °C, ID = IAR, VDD = 50 V.

STF6N60DM2

Electrical ratings

DS12220 - Rev 3

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