STF6N60DM2 datasheet(4/12 Pages) STMICROELECTRONICS

部件名	STF6N60DM2

功能描述	N-channel 600 V, 0.95 typ., 5 A MDmesh™ DM2 Power MOSFET in a TO-220FP package

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM (1)

Source-drain current (pulsed)

VSD (2)

Forward on voltage

VGS = 0 V, ISD = 5 A

1.6

trr

Reverse recovery time

ISD = 5 A, di/dt = 100 A/µs,

VDD = 60 V

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

Qrr

Reverse recovery charge

135

IRRM

Reverse recovery current

4.5

trr

Reverse recovery time

ISD = 5 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

132

Qrr

Reverse recovery charge

429

IRRM

Reverse recovery current

6.5

1. Pulse width is limited by safe operating area.

2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

STF6N60DM2

Electrical characteristics

DS12220 - Rev 3

page 4/12

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