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ADRF5141BCCZN-R7 数据表(PDF) 4 Page - Analog Devices |
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ADRF5141BCCZN-R7 数据表(HTML) 4 Page - Analog Devices |
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4 / 13 page ![]() Data Sheet ADRF5141 SPECIFICATIONS analog.com Rev. 0 | 4 of 13 Table 1. Specifications Parameter Symbol Test Conditions/Comments Min Typ Max Unit Low and High IINL, IINH <1 µA SUPPLY CURRENT VDD and VSS pins Positive Supply Current IDD 13 µA Negative Supply Current ISS 360 µA RECOMMENDED OPERATING CONDITONS Supply Voltage Positive VDD 3.15 3.45 V Negative VSS −3.45 −3.15 V Digital Control Voltage VCTRL 0 VDD V RF Power PIN Input at TX1 f = 8 GHz to 11 GHz, TCASE = 85°C2 Continuous Wave 36 dBm Pulsed3 5% duty cycle, >100 ns pulse width, TCASE = 85°C 40 dBm 15% duty cycle, >100 ns pulse width, TCASE = 50°C 40 dBm Peak 5% duty cycle, ≤100 ns peak duration 43 dBm Input at ANT f = 6 GHz to 12 GHz, TCASE = 85°C2 Continuous Wave 33 dBm Pulsed3 5% duty cycle, >100 ns pulse width, TCASE = 85°C 40 dBm 15% duty cycle, >100 ns pulse width, TCASE = 50°C 40 dBm Peak 5% duty cycle, ≤100 ns peak duration 40 dBm Case Temperature TCASE −40 +105 °C 1 For power derating vs. frequency for input at TX, see Figure 2. 2 For 105°C operation, the power handling degrades from the TCASE = 85°C specifications by 3 dB. 3 For different pulsed conditions, please contact applications support. |
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