| 数据搜索系统,热门电子元器件搜索 |
|
NTMFS4922NET1G 数据表(PDF) 4 Page - ON Semiconductor |
|
|
|||||||||||||||||||||||||||||
NTMFS4922NET1G 数据表(HTML) 4 Page - ON Semiconductor |
|
4 / 8 page ![]() NTMFS4922NE http://onsemi.com 4 TYPICAL CHARACTERISTICS 0 20 40 60 80 100 120 140 160 180 0123 45 VGS = 3.4 V 2.2 V 2.4 V 2.6 V 2.8 V 3.0 V 3.2 V 3.6 V to 10 V TJ = 25°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics 0 20 40 60 80 100 120 140 160 180 1 1.5 2 2.5 3 3.5 4 TJ = 25°C TJ = −55°C TJ = 125°C Figure 2. Transfer Characteristics VGS, GATE−TO−SOURCE VOLTAGE (V) 0.0014 0.0016 0.0018 0.0020 0.0022 0.0024 0.0026 0.0028 34 56789 10 Figure 3. On−Resistance vs. Gate−to−Source Voltage VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 30 A TJ = 25°C 0.0026 0.0012 0.0014 0.0016 0.0018 0.0020 0.0022 0.0024 20 40 60 80 100 120 140 160 180 Figure 4. On−Resistance vs. Drain Current and Gate Voltage ID, DRAIN CURRENT (A) VGS = 4.5 V VGS = 10 V TJ = 25°C 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 −50 −25 0 25 50 75 100 125 150 Figure 5. On−Resistance Variation with Temperature TJ, JUNCTION TEMPERATURE (°C) ID = 30 A VGS = 10 V 100 1000 10000 100000 5 1015202530 Figure 6. Drain−to−Source Leakage Current vs. Voltage VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS = 0 V TJ = 150°C TJ = 125°C TJ = 85°C VDS = 10 V 200 |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |