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NTMFS4922NET1G 数据表(PDF) 5 Page - ON Semiconductor

部件名 NTMFS4922NET1G
功能描述  Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL
PDF  8 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

NTMFS4922NET1G 数据表(HTML) 5 Page - ON Semiconductor

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NTMFS4922NE
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5
TYPICAL CHARACTERISTICS
0
1000
2000
3000
4000
5000
6000
7000
0
5
10
15
20
25
30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
TJ = 25°C
Coss
Crss
Ciss
VGS = 0 V
0
1
2
3
4
5
6
7
8
9
10
11
0
10
203040
5060
7080
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
QG, TOTAL GATE CHARGE (nC)
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A
QT
QGS
QGD
1
10
100
1000
1
10
100
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
RG, GATE RESISTANCE (W)
tr
td(off)
td(on)
tf
VDD = 15 V
ID = 15 A
VGS = 10 V
0
5
10
15
20
25
30
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
VGS = 0 V
Figure 10. Diode Forward Voltage vs. Current
TJ = 25°C
TJ = 125°C
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0 V < VGS < 10 V
SINGLE PULSE
TC = 25°C
1 ms
10 ms
10 ms
dc
100 ms
0
20
40
60
80
100
120
140
160
180
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
ID = 37 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
200



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