NTMFS4922NET1G datasheet(3/8 Pages) ONSEMI

部件名	NTMFS4922NET1G

功能描述	Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL

PDF	8 Pages

Scroll/Zoom	100%

制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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NTMFS4922NE

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Unit

Max

Typ

Min

Test Condition

Symbol

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

td(ON)

VGS = 10 V, VDS = 15 V, ID = 15 A,

RG = 3.0 W

13.2

Rise Time

33.3

Turn−Off Delay Time

td(OFF)

49.7

Fall Time

7.8

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 30 A

TJ = 25°C

0.79

1.0

TJ = 125°C

0.65

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 30 A

59.1

Charge Time

28.3

Discharge Time

30.8

Reverse Recovery Charge

QRR

PACKAGE PARASITIC VALUES

Source Inductance

TA = 25°C

1.00

Drain Inductance

0.005

Gate Inductance

1.84

Gate Resistance

0.55

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

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