May 2009

Doc ID 15708 Rev 1

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STAP57060

RF power transistor, LdmoST plastic family

N-channel enhancement-mode lateral MOSFETs

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 60 W with 14.3 dB gain @ 945 MHz /

28 V

■ ST advanced PowerSO-10 RF-STAP-package

Description

The STAP57060 is a common source N-Channel,

enhancement-mode lateral Field-Effect RF power

MOSFET. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 28 V in common source mode at frequencies of

up to 1 GHz. STAP57060 boasts the excellent

gain, linearity and reliability of ST’s latest LDMOS

technology mounted in STAP1 plastic RF power

package.

STAP package has been specially optmized for

RF needs and offers excellent performances and

ease of assembly.

Mounting recommendations are available in

www.st.com/rf/ (look for application note

AN1294)

Figure 1.

Pin connection

DRAIN

GATE

SOURCE

Table 1.

Device summary

Order codes

Package

Packaging

STAP57060

STAP1

Tube

www.st.com

Obsolete

Product(s)

- Obsolete

Product(s)