STAP57060 datasheet(4/16 Pages) STMICROELECTRONICS

部件名	STAP57060

功能描述	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

PDF	16 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical characteristics

STAP57060

4/16

Doc ID 15708 Rev 1

Electrical characteristics

(TCASE = 25 °C)

3.1

Static

Table 4.

Static

3.2

Dynamic

Table 5.

Dynamic

Symbol

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

VGS = 0 V

IDS = 1 mA

IDSS

VGS = 0 V

VDS = 28 V

µA

IGSS

VGS = 20 V

VDS = 0 V

µA

VGS(Q)

VDS = 28 V

ID = 100 mA

2.0

4.0

VDS(ON)

VGS = 10 V

ID = 3 A

0.7

0.8

GFS

VDS = 10 V

ID = 3 A

2.5

mho

CISS

VGS = 0 V

VDS = 28 V

f = 1 MHz

COSS

VGS = 0 V

VDS = 28 V

f = 1 MHz

CRSS

VGS = 0 V

VDS = 28 V

f = 1 MHz

Symbol

Test conditions

Min.

Typ.

Max.

Unit

POUT

VDD = 28 V IDQ = 100 mA

f = 945 MHz

GPS

VDD = 28 V IDQ = 100 mA POUT = 60 W f = 945 MHz

14.3

ηD

VDD = 28 V

IDQ = 100 mA POUT = 60 W f = 945 MHz

Load

mismatch

VDD = 28 V IDQ = 100 mA POUT = 60 W

f = 945 MHz

All phase angles

5:1

VSWR

Obsolete

Product(s)

- Obsolete

Product(s)

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