TO-3PF

1

2

3

1

2

3

TAB

TO-220

1

2

3

TO-247

1

3

2

TAB

H PAK-2

2

AM15557v1

(TO-3PF, TO-220 and TO-247)

S(2, 3)

S(3)

D(TAB)

D(2, TAB)

G(1)

G(1)

(H PAK-2)

2

Features

Order codes

VDS

RDS(on) max.

ID

PTOT

STFW3N150

1500 V

9 Ω

2.5 A

63 W

STH3N150-2

140 W

STP3N150

STW3N150

•

100% avalanche tested

•

Intrinsic capacitances and Qg minimized

•

High speed switching

•

Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)

Applications

•

Switching applications

Description

These Power MOSFETs are designed using the STMicroelectronics consolidated

strip-layout-based MESH OVERLAY process. The result is a product that matches or

improves on the performance of comparable standard parts from other

manufacturers.

Product status link

STFW3N150

STH3N150-2

STP3N150

STW3N150

N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs

in TO-3PF, H2PAK-2, TO-220 and TO247 packages

STFW3N150, STH3N150-2

STP3N150, STW3N150

Datasheet

DS5052 - Rev 12 - May 2020

For further information contact your local STMicroelectronics sales office.

www.st.com