STP3N150 datasheet(2/22 Pages) STMICROELECTRONICS

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Electrical ratings

Table 1.

Symbol

Parameter

Value

Unit

TO-3PF

H2PAK-2 TO-220 TO-247

VDS

Drain-source voltage

1500

VGS

Gate-source voltage

±30

Drain current (continuous) at TC = 25 °C

2.5(1)

2.5

Drain current (continuous) at TC = 100 °C

1.6(1)

1.6

IDM(2)

Drain current (pulsed)

PTOT

Total power dissipation at TC = 25 °C

140

VISO

Insulation withstand voltage (RMS) from all three leads to

external heat sink (t = 1 s; TC = 25 °C)

3.5

Derating factor

0.5

1.12

W/°C

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

1. Limited by maximum junction temperature.

2. Pulse width limited by safe operating area.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

TO-3PF

H2PAK-2 TO-220 TO-247

Rthj-case

Thermal resistance junction-case

0.89

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

°C/W

Rthj-pcb(1)

Thermal resistance junction-pcb

°C/W

1. When mounted on 1 inch2 FR-4 board, 2 oz Cu.

Table 3.

Symbol

Parameter

Max value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by TJ max)

2.5

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAR, VDD = 50 V)

450

STFW3N150, STH3N150-2, STP3N150, STW3N150

Electrical ratings

DS5052 - Rev 12

page 2/22

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