2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

1500

V

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 1500 V

10

µA

VGS = 0 V, VDS = 1500 V, TC = 125 °C (1)

500

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±30 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 1.3 A

6

9

Ω

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz, VGS = 0 V

-

939

-

pF

Coss

Output capacitance

-

102

-

Crss

Reverse transfer capacitance

-

13.2

-

Coss eq.(1)

Equivalent output capacitance

VDS = 0 to 1200 V, VGS = 0 V

-

100

-

pF

Rg

Gate input resistance

f = 1 MHz, gate DC Bias = 0,

test signal level = 20 mV, ID = 0 A

-

4

-

Ω

Qg

Total gate charge

VDD = 1200 V, ID = 2.5 A, VGS = 0 to 10 V

(see Figure 18. Test circuit for gate

charge behavior)

-

29.3

-

nC

Qgs

Gate-source charge

-

4.6

-

Qgd

Gate-drain charge

-

17

-

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 750 V, ID = 1.25 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 17. Test circuit for resistive

load switching times and

Figure 22. Switching time waveform)

-

24

-

ns

tr

Rise time

-

47

-

td(off)

Turn-off delay time

-

45

-

tf

Fall time

-

61

-

STFW3N150, STH3N150-2, STP3N150, STW3N150

Electrical characteristics

DS5052 - Rev 12

page 3/22