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VS-VSK.166..PBF 数据表(PDF) 8 Page - Vishay Siliconix |
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VS-VSK.166..PBF 数据表(HTML) 8 Page - Vishay Siliconix |
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8 / 13 page ![]() VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series www.vishay.com Vishay Semiconductors Revision: 04-May-17 8 Document Number: 94357 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 23 - Maximum Non-Repetitive Surge Current Fig. 24 - Maximum Non-Repetitive Surge Current Fig. 25 - On-State Power Loss Characteristics Fig. 26 - On-State Power Loss Characteristics 5000 4500 4000 3500 3000 2500 2000 1500 Number of Equal Amplitude Half Cycle Current Pulse (A) 10 100 1 VSK.236.. Series at 60 Hz 0.0083 s at 50 Hz 0.0100 s At any rated load condition and with rated V RRM applied following surge. Initial T J = 150 °C 5000 3000 5500 4000 4500 3500 2500 2000 1500 1000 Pulse Train Duration (s) 0.1 1.0 0.01 Maximum non-repetitive surge current VSK.236.. Series Initial T J = 150 °C No voltage reapplied Rated V RRM reapplied versus pulse train duration. 0 350 400 450 300 250 200 150 100 50 Total RMS Output Current (A) 50 100 150 200 250 300 350 0 DC VSK.236.. Series Per junction T J = 150 °C 0 350 400 450 300 250 200 150 100 50 Maximum Allowable Ambient Temperature (°C) 25 50 75 100 125 150 0 0.16 K/W 0.25 K/W 0.35 K/W 0.5 K/W 0.7 K/W 0 1000 1600 Total Output Current (A) 100 200 300 400 500 0 180° (Sine) 180° (Rect) 2 x VSK.236.. Series Single phase bridge Connected T J = 150 °C + - ~ 1400 1200 800 600 400 200 0 800 600 400 200 1600 1400 1200 1000 Maximum Allowable Ambient Temperature (°C) 50 25 75 100 125 150 0 0.04 K/W 0.06 K/W 0.08 K/W 0.12 K/W 0.16 K/W 0.25 K/W 0.4 K/W R thSA = 0.02 K/W - Δ R |
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