VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series

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Vishay Semiconductors

Revision: 04-May-17

2

Document Number: 94357

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FORWARD CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

VSK.166 VSK.196 VSK.236

Maximum average on-state



current at case temperature

IF(AV)

180° conduction, half sine wave

165

195

230

A

100

100

100

°C

Maximum RMS on-state current

IF(RMS)

260

305

360

A

Maximum peak, one-cycle

on-state, non-repetitive



surge current

IFSM

t = 10 ms

No voltage



reapplied

Sine half wave,



initial TJ =

TJ maximum

4000

4750

5500

t = 8.3 ms

4200

4980

5765

t = 10 ms

100 % VRRM 

reapplied

3350

4000

4630

t = 8.3 ms

3500

4200

4850

Maximum I2t for fusing

I2t

t = 10 ms

No voltage



reapplied

80

113

151

kA2s

t = 8.3 ms

73

103

138

t = 10 ms

100 % VRRM 

reapplied

56

80

107

t = 8.3 ms

52

73

98

Maximum I2

t for fusing

I2

t

t = 0.1 ms to 10 ms, no voltage reapplied

798

1130

1516

kA2s

Low level value of threshold voltage

VF(TO)1

(16.7 % x

 x I

F(AV) < I <  x IF(AV)), TJ maximum

0.73

0.69

0.7

V

High level value of threshold voltage

VF(TO)2

(I >

 x I

F(AV)), TJ maximum

0.88

0.78

0.83

Low level value on-state



slope resistance

rt1

(16.7 % x

 x I

F(AV) < I <  x IF(AV)), TJ maximum

1.5

1.3

1.2

m



High level value on-state



rt2

(I >

 x I

F(AV)), TJ maximum

1.26

1.2

1.07

Maximum forward voltage drop

VFM

IFM =  x IF(AV), TJ = 25 °C, 180° conduction

Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2

1.43

1.38

1.46

V

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

VSK.166 VSK.196 VSK.236

UNITS

Maximum peak reverse and



off-state leakage current

IRRM

TJ = 150 °C

20

mA

RMS insulation voltage

VINS

50 Hz, circuit to base, all terminals shorted,



t = 1 s

3500

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

VSK.166 VSK.196 VSK.236

Maximum junction operating and

storage temperature range

TJ, TStg

-40 to +150

°C

Maximum thermal resistance,



junction to case per junction

RthJC

DC operation

0.2

0.16

0.14

K/W

Maximum thermal resistance,



case to heatsink per module

RthCS

Mounting surface smooth, flat and greased

0.05

Mounting



torque ± 10 %

IAP to heatsink

A mounting compound is recommended and

the torque should be rechecked after a period

of 3 hours to allow for the spread of



the compound. Lubricated threads.

4 to 6

Nm

busbar to IAP

Approximate weight

200

g

7.1

oz.

Case style

INT-A-PAK