VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series

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Vishay Semiconductors

Revision: 04-May-17

3

Document Number: 94357

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Note

• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

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Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

Fig. 3 - On-State Power Loss Characteristics

Fig. 4 - On-State Power Loss Characteristics

R CONDUCTION PER JUNCTION

DEVICES

SINUSOIDAL CONDUCTION

AT TJ MAXIMUM

RECTANGULAR CONDUCTION

AT TJ MAXIMUM

UNITS

180°

120°

90°

60°

30°

180°

120°

90°

60°

30°

VSK.166

0.025

0.03

0.038

0.055

0.089

0.018

0.031

0.041

0.057

0.089

K/W

VSK.196

0.016

0.019

0.024

0.034

0.053

0.012

0.02

0.026

0.035

0.054

VSK.236

0.009

0.010

0.014

0.018

0.025

0.008

0.012

0.015

0.019

0.025

120

110

100

130

140

150

90

80

70

Average Forward Current (A)

40

80

120

160

200

0

30°

60°

90°

120°

180°

VSK.166.. Series

R

thJC (DC) = 0.20 K/W

Conduction angle

Ø

90

80

70

130

140

150

120

110

100

Average Forward Current (A)

50

100

150

200

250

300

0

DC

30°

60°

90°

120°

180°

VSK.166.. Series

R

thJC (DC) = 0.20 K/W

Ø

Conduction period

0

50

250

200

150

100

Average Forward Current (A)

80

40

120

160

200

0

RMS limit

180°

120°

90°

60°

30°

VSK.166.. Series

T

J = 150 °C

Conduction angle

Ø

0

50

200

150

100

Average Forward Current (A)

100

50

150

200

250

300

0

DC

180°

120°

90°

60°

30°

RMS limit

VSK.166.. Series

Per junction

T

J = 150 °C

Ø

Conduction period

250

300