STW36NM60N datasheet(5/13 Pages) STMICROELECTRONICS

部件名	STW36NM60N

功能描述	N-channel 600 V, 0.092 Ω, 29 A, MDmesh™ II Power MOSFET in TO-247

PDF	13 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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5 / 13 page

STW36NM60N

Electrical characteristics

Doc ID 018963 Rev 1

5/13

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

VDD = 300 V, ID = 14.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 14)

106

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

ISD

ISDM

(1)

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

116

VSD

(2)

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

ISD = 29 A, VGS = 0

1.6

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 29 A, di/dt = 100 A/µs

VDD= 60 V (see Figure 19)

408

µC

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 29 A, di/dt = 100 A/µs

VDD= 60 V Tj = 150 °C

(see Figure 19)

480

µC

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