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STW36NM60N 数据表(PDF) 3 Page - STMicroelectronics

部件名 STW36NM60N
功能描述  N-channel 600 V, 0.092 Ω, 29 A, MDmesh™ II Power MOSFET in TO-247
PDF  13 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STW36NM60N 数据表(HTML) 3 Page - STMicroelectronics

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STW36NM60N
Electrical ratings
Doc ID 018963 Rev 1
3/13
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS=0)
600
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
29
A
ID
Drain current (continuous) at TC = 100 °C
18
A
IDM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
116
A
PTOT
Total dissipation at TC = 25 °C
210
W
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max.)
10.5
A
EAS
Single pulse avalanche energy
(Starting Tj = 25 °C, ID = IAR, VDD = 50 V.)
345
mJ
dv/dt (2)
2.
ISD ≤ 29 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
Tstg
Storage temperature
-55 to 150
°C
Tj
Max. operating juncion temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
0.6
°C/W
Rthj-pcb
(1)
1.
When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Thermal resistance junction-pcb max
30
°C/W
Tl
Maximum lead temperature for soldering purposes
300
°C
Obsolete
Product(s)
- Obsolete
Product(s)



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