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STW36NM60N 数据表(PDF) 3 Page - STMicroelectronics |
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STW36NM60N 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 13 page ![]() STW36NM60N Electrical ratings Doc ID 018963 Rev 1 3/13 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS=0) 600 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 29 A ID Drain current (continuous) at TC = 100 °C 18 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 116 A PTOT Total dissipation at TC = 25 °C 210 W IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max.) 10.5 A EAS Single pulse avalanche energy (Starting Tj = 25 °C, ID = IAR, VDD = 50 V.) 345 mJ dv/dt (2) 2. ISD ≤ 29 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS Peak diode recovery voltage slope 15 V/ns Tstg Storage temperature -55 to 150 °C Tj Max. operating juncion temperature 150 °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.6 °C/W Rthj-pcb (1) 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec Thermal resistance junction-pcb max 30 °C/W Tl Maximum lead temperature for soldering purposes 300 °C Obsolete Product(s) - Obsolete Product(s) |
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