June 2011

Doc ID 018963 Rev 1

1/13

13

STW36NM60N

N-channel 600 V, 0.092

Ω, 29 A, MDmesh™ II Power MOSFET

in TO-247

Features

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Application

■ Switching applications

– Automotive

Description

This device is made using the second generation

of MDmesh™ technology. This revolutionary

Power MOSFET associates a new vertical

structure to the company’s strip layout to yield one

of the world’s lowest on-resistance and gate

charge. It is therefore suitable for the most

demanding high efficiency converters.

Figure 1.

Internal schematic diagram

Order code

VDSS @

TJmax

RDS(on)

max

ID

PW

STW36NM60N

650 V

< 0.105

Ω 29 A 210 W

TO-247

1

2

3

Table 1.

Device summary

Order code

Marking

Package

Packaging

STW36NM60N

36NM60N

TO-247

Tape and reel

www.st.com

Obsolete

Product(s)

- Obsolete

Product(s)