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STW70N65DM6 数据表(PDF) 5 Page - STMicroelectronics

部件名 STW70N65DM6
功能描述  N-channel 650 V, 36 mΩ typ., 68 A MDmesh™ DM6 Power MOSFETs in TO-247 and TO-247 long leads packages
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STW70N65DM6 数据表(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GADG280620190757SOA
102
101
100
10-1
10-1
100
101
102
ID
(A)
VDS (V)
Operation in this area
is limited by RDS(on)
TC = 25 °C, TJ ≤ 150 °C
single pulse
tp = 1 ms
IDM
tp = 1 µs
tp = 100 µs
tp = 10 µs
V(BR)DSS
Figure 2. Transient thermal impedance
GADG280620190822ZTH
10 -1
10 -2
10 -3
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
Zthj-c
tp (s)
(°C/W)
single pulse
0.05
0.1
duty = 0.5
0.4
0.3
0.2
ton
duty = ton / T
T
Figure 3. Output characteristics
GADG060620191330OCH
240
200
160
120
80
40
0
0
2
4
6
8
10
12
ID
(A)
VDS (V)
VGS = 9, 10 V
VGS = 8 V
VGS = 6 V
VGS = 7 V
Figure 4. Transfer characteristics
GADG060620191331TCH
240
200
160
120
80
40
0
4
5
6
7
8
9
ID
(A)
VGS (V)
VDS = 12 V
Figure 5. Gate charge
GADG060620191331QVG
600
500
400
300
200
100
0
12
10
8
6
4
2
0
0
30
60
90
120
150
Qg (nC)
VDD = 520 V, ID = 68 A
Qg
Qgd
Qgs
VDS
(V)
VGS
(V)
Figure 6. Static drain-source on-resistance
GADG060620191329RID
39
38
37
36
35
34
33
0
10
20
30
40
50
60
RDS(on)
(mΩ)
ID (A)
VGS =10 V
STW70N65DM6, STWA70N65DM6
Electrical characteristics (curves)
DS12313 - Rev 2
page 5/15



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