1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

V

ID

Drain current (continuous) at TC = 25 °C

68

A

ID

Drain current (continuous) at TC = 100 °C

43

A

ID (1)

Drain current (pulsed)

260

A

PTOT

Total power dissipation at TC = 25 °C

450

W

dv/dt(2)

Peak diode recovery voltage slope

50

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

100

V/ns

TSTG

Storage temperature range

-55 to 150

°C

TJ

Operating junction temperature range

°C

1. Pulse width limited by safe operating area.

2. ISD ≤ 68 A, di/dt ≤ 900 A/μs; VDS(peak) < V(BR)DSS, VDD = 400 V

3. VDS ≤ 520 V

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.28

°C/W

Rthj-amb

Thermal resistance junction-ambient

50

°C/W

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (tp limited by Tj max)

8

A

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V)

1.8

J

STW70N65DM6, STWA70N65DM6

Electrical ratings

DS12313 - Rev 2

page 2/15