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STW70N65DM6 数据表(PDF) 4 Page - STMicroelectronics |
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STW70N65DM6 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 15 page ![]() Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 68 A ISDM (1) Source-drain current (pulsed) - 260 A VSD (2) Forward on voltage VGS = 0 V, ISD = 68 A - 1.6 V trr Reverse recovery time ISD = 68 A, di/dt = 100 A/μs, VDD = 60 V, (see Figure 15) - 17 - ns Qrr Reverse recovery charge - 1.08 - µC IRRM Reverse recovery current - 12.7 - A trr Reverse recovery time ISD = 68 A, di/dt = 100 A/μs, VDD = 60 V, TJ = 150 °C (see Figure 15) - 308 - ns Qrr Reverse recovery charge - 4.16 - µC IRRM Reverse recovery current - 27 - A 1. Pulse width is limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% STW70N65DM6, STWA70N65DM6 Electrical characteristics DS12313 - Rev 2 page 4/15 |
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