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APTM100H45ST 数据表(PDF) 2 Page - Advanced Power Technology |
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APTM100H45ST 数据表(HTML) 2 Page - Advanced Power Technology |
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2 / 6 page ![]() APTM100H45ST APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 250µA 1000 V VGS = 0V,VDS= 1000V Tj = 25°C 100 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS= 800V Tj = 125°C 500 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 9A 450 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 4350 Coss Output Capacitance 715 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 120 pF Qg Total gate Charge 154 Qgs Gate – Source Charge 26 Qgd Gate – Drain Charge VGS = 10V VBus = 500V ID = 18A 97 nC Td(on) Turn-on Delay Time 10 Tr Rise Time 12 Td(off) Turn-off Delay Time 121 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 667V ID = 18A RG = 5Ω 35 ns Eon Turn-on Switching Energy 639 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 667V ID = 18A, RG = 5Ω 380 µJ Eon Turn-on Switching Energy 1046 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 667V ID = 18A, RG = 5Ω 451 µJ Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 85°C 30 A IF = 30A 1.1 1.15 IF = 60A 1.4 VF Diode Forward Voltage IF = 30A Tj = 125°C 0.9 V Tj = 25°C 24 trr Reverse Recovery Time IF = 30A VR = 133V di/dt = 200A/µs Tj = 125°C 48 ns Tj = 25°C 33 Qrr Reverse Recovery Charge IF = 30A VR = 133V di/dt = 200A/µs Tj = 125°C 150 nC |
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