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APTM100H45ST 数据表(PDF) 6 Page - Advanced Power Technology |
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APTM100H45ST 数据表(HTML) 6 Page - Advanced Power Technology |
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6 / 6 page ![]() APTM100H45ST APT website – http://www.advancedpower.com 6 – 6 Delay Times vs Current td(on) td(off) 0 20 40 60 80 100 120 140 160 5 10152025 303540 ID, Drain Current (A) VDS=667V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 0 10 20 30 40 50 60 5 10 1520 25303540 ID, Drain Current (A) VDS=667V RG=5Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 0 0.5 1 1.5 2 5 1015202530 35 40 ID, Drain Current (A) VDS=667V RG=5Ω TJ=125°C L=100µH Eon Eoff 0 0.5 1 1.5 2 2.5 0 5 10 15 20 25 30 Gate Resistance (Ohms) Switching Energy vs Gate Resistance VDS=667V ID=18A TJ=125°C L=100µH 0 50 100 150 200 250 6 8 10 12 14 16 18 ID, Drain Current (A) Operating Frequency vs Drain Current VDS=667V D=50% RG=5Ω TJ=125°C TJ=25°C TJ=150°C 1 10 100 1000 0.20.4 0.60.8 1 1.2 1.41.6 1.8 VSD, Source to Drain Voltage (V) Source to Drain Diode Forward Voltage APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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