APTM100H45ST

APT website – http://www.advancedpower.com

3 – 6

Parallel diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Maximum Average Forward Current

50% duty cycle

30

A

1.9

2.3

2.2

Diode Forward Voltage

1.7

V

290

Reverse Recovery Time

di/dt = 200A/µs

390

ns

670

Reverse Recovery Charge

di/dt = 200A/µs

2350

nC

Thermal and package characteristics

Symbol Characteristic

Min

Typ

Max

Unit

Transistor

0.35

Junction to Case

Diode

1.2

°C/W

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz

2500

V

Operating junction temperature range

-40

150

Storage Temperature Range

-40

125

Operating Case Temperature

-40

100

°C

Torque Mounting torque

To Heatsink

M5

4.7

N.m

Wt

Package Weight

160

g

Temperature sensor NTC

Symbol Characteristic

Min

Typ

Max

Unit

Resistance @ 25°C

68

k

Ω

4080

K

























−

=

T

T

B

R

R

T

1

1

exp

25

85

/

25

25

Package outline

T: Thermistor temperature