Si32172/3/5

Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com

11

Rev. 1.0 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • August 31, 2021

Table 9. Thermal Conditions

Parameter

Symbol

Test Condition

Value

Unit

Storage Temperature Range

TSTG

–55 to 150

°C

Thermal Resistance, Typical1

QFN-42



JA



JB



JC

53

33

39

°C/W

Continuous Power Dissipation2,3

QFN-42

PD

TA = 85 °C

0.75

W

Maximum Junction Temperature,

QFN-42 (Linefeed Die)

TJHV

Continuous

145

°C

Maximum Junction Temperature

QFN-42 (Low Voltage Die)

TJLV

125

°C

Notes:

1. The thermal resistance of an exposed pad package is assured when the recommended printed circuit board layout

guidelines are followed correctly. The specified performance requires that the exposed pad be soldered to an exposed

copper surface of at least equal size and that multiple vias are added to enable heat transfer between the top-side

copper surface and a large internal/bottom copper plane. Thermal resistance values are empirical measurements taken

from Skyworks Solutions EVBs.

2. Operation above 125 °C junction temperature may degrade device reliability. Thermal resistance values are empirical

measurements taken from Skyworks Solutions EVBs.

3. The linefeed is equipped with on-chip thermal limiting circuitry that shuts down the circuit when the junction temperature

exceeds the thermal shutdown threshold. The thermal shutdown threshold should normally be set to 145 °C; when in

the ringing state with cadence the thermal shutdown may be set to 200 °C. For optimal reliability long term operation of

the linefeed above 150 °C junction temperature should be avoided.

Table 10. Absolute Maximum Ratings1

Parameter

Symbol

Test Condition

Value

Unit

Supply Voltage

VDD, VDDIO

–0.5 to 4.0

V

Digital Input Voltage

VIND

–0.3 to 3.6

V

Battery Supply Voltage2, Si32172/5

VBAT

+0.4 to –115

V

Battery Supply Voltage3, Si32173

VBAT

+0.4 to –142

V

Tip or Ring Voltage, Si32172/53

VTIP, VRING

–130

V

Tip or Ring Voltage, Si321733

VTIP, VRING

–142

V

TIP, RING Current

ITIP, IRING

±100

mA

Notes:

1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be

restricted to the conditions as specified in the operational sections of this data sheet.

2. The dv/dt of the voltage applied to the VBAT pins must be limited to 10 V/µs.

3. Specification requires circuit for surge event as shown in typical application circuit.