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STTH1R02A 数据表(PDF) 2 Page - STMicroelectronics

部件名 STTH1R02A
功能描述  Ultrafast recovery diode
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH1R02A 数据表(HTML) 2 Page - STMicroelectronics

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Characteristics
STTH1R02
2/8
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.68 x IF(AV) + 0.08 IF
2
(RMS)
Table 1.
Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
200
V
IFRM
Repetitive peak forward current
DO-41(1)
tp = 5 µs, F = 5 kHz
30
A
SMA
IF(RMS)
RMS forward current
DO-41
50
A
SMA
IF(AV)
Average forward current,
δ = 0.5
DO-41
Tlead = 110° C
1.5
A
SMA
Tc = 110° C
IFSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
60
A
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature
DO-41(1)
175
°C
SMA
150
1.
On infinite heatsink with 10 mm lead length
Table 2.
Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to lead
Lead Length = 10 mm on infinite heatsink DO-41
45
°C/W
Junction to case
SMA
30
Table 3.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
3
µA
Tj = 125 °C
2
20
VF
(2)
Forward voltage drop
Tj = 25 °C
IF = 4.5 A
1.2
V
Tj = 25 °C
IF = 1.5 A
0.89
1
Tj = 100 °C
0.76
0.85
Tj = 150 °C
0.70
0.80
1.
Pulse test: tp = 5 ms, δ < 2 %
2.
Pulse test: tp = 380 µs, δ < 2 %



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