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STTH1R02A 数据表(PDF) 4 Page - STMicroelectronics

部件名 STTH1R02A
功能描述  Ultrafast recovery diode
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH1R02A 数据表(HTML) 4 Page - STMicroelectronics

  STTH1R02A Datasheet HTML 1Page - STMicroelectronics STTH1R02A Datasheet HTML 2Page - STMicroelectronics STTH1R02A Datasheet HTML 3Page - STMicroelectronics STTH1R02A Datasheet HTML 4Page - STMicroelectronics STTH1R02A Datasheet HTML 5Page - STMicroelectronics STTH1R02A Datasheet HTML 6Page - STMicroelectronics STTH1R02A Datasheet HTML 7Page - STMicroelectronics STTH1R02A Datasheet HTML 8Page - STMicroelectronics  
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Characteristics
STTH1R02
4/8
Figure 5.
Relative variation of thermal
impedance junction to case versus
pulse duration (DO-41)
Figure 6.
Junction capacitance versus
reverse applied voltage (typical
values)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Z
th(j-a)/Rth(j-a)
Single pulse
DO-41
Lleads=10mm
tP(s)
1
10
100
1
10
100
1000
C(pF)
F=1MHz
V
osc=30mVRMS
T
j=25°C
VR(V)
Figure 7.
Reverse recovery charges
versus dIF/dt (typical values)
Figure 8.
Reverse recovery time versus dIF/dt
(typical values)
0
10
20
30
40
50
60
70
80
10
100
1000
Q
RR(nC)
I
F=1.5A
V
R=160V
T
j=125°C
T
j=25°C
dIF/dt(A/µs)
0
10
20
30
40
50
60
70
80
10
100
1000
t
RR(ns)
I
F=1.5A
V
R=160V
T
j=125°C
T
j=25°C
dIF/dt(A/µs)
Figure 9.
Peak reverse recovery curent
versus dIF/dt (typical values)
Figure 10.
Dynamic parameters versus
junction temperature
0
1
2
3
4
5
6
7
8
10
100
1000
I
RM(A)
I
F=1.5A
V
R=160V
T
j=125°C
T
j=25°C
dIF/dt(A/µs)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
150
Q
RR;IRM [Tj]/ QRR;IRM [Tj=125°C]
I
RM
Q
RR
I
F=1.5A
V
R=160V
Tj(°C)



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