STTH1R02A datasheet(3/8 Pages) STMICROELECTRONICS

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STTH1R02

Characteristics

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Table 4.

Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

trr

Reverse recovery time

IF = 1 A, dIF/dt = -50 A/µs,

VR = 30 V, Tj = 25 °C

IF = 1 A, dIF/dt = -100 A/µs,

VR = 30 V, Tj = 25 °C

IRM

Reverse recovery current

IF = 1.5 A, dIF/dt = -200 A/µs,

VR = 160 V, Tj = 125 °C

tfr

Forward recovery time

IF = 1.5 A, dIF/dt = 100 A/µs

VFR = 1.1 x VFmax, Tj = 25 °C

VFP

Forward recovery voltage

IF = 1.5 A, dIF/dt = 100 A/µs,

Tj = 25 °C

2.1

Figure 1.

Peak current versus duty cycle

Figure 2.

Forward voltage drop versus

forward current (typical values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

M(A)

d=tp/T

δ=tp/T

P = 2 W

P = 1 W

P = 5 W

0.0

0.5

1.0

1.5

2.0

2.5

FM(A)

j=25°C

j=150°C

VFM(V)

Figure 3.

Forward voltage drop versus

forward current (maximum values)

Figure 4.

Relative variation of thermal

impedance junction to case versus

pulse duration (SMA)

0.0

0.5

1.0

1.5

2.0

2.5

FM(A)

j=25°C

j=150°C

VFM(V)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

th(j-a)/Rth(j-a)

Single pulse

SMA

cu=1cm²

tP(s)

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