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IXDN430 数据表(PDF) 12 Page - IXYS Corporation

部件名 IXDN430
功能描述  30 Amp Low-Side Ultrafast MOSFET / IGBT Driver
PDF  12 Pages
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制造商  IXYS [IXYS Corporation]
网页  http://www.ixys.com
标志 IXYS - IXYS Corporation

IXDN430 数据表(HTML) 12 Page - IXYS Corporation

Back Button IXDN430 Datasheet HTML 4Page - IXYS Corporation IXDN430 Datasheet HTML 5Page - IXYS Corporation IXDN430 Datasheet HTML 6Page - IXYS Corporation IXDN430 Datasheet HTML 7Page - IXYS Corporation IXDN430 Datasheet HTML 8Page - IXYS Corporation IXDN430 Datasheet HTML 9Page - IXYS Corporation IXDN430 Datasheet HTML 10Page - IXYS Corporation IXDN430 Datasheet HTML 11Page - IXYS Corporation IXDN430 Datasheet HTML 12Page - IXYS Corporation  
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IXDN430 / IXDI430 / IXDD430 / IXDS430
IXYS Semiconductor GmbH
Edisonstrasse15 ; D-68623; Lampertheim
Tel: +49-6206-503-0; Fax: +49-6206-503627
e-mail: marcom@ixys.de
IXYS Corporation
3540 Bassett St; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
www.ixys.com
e-mail: sales@ixys.net
OUTPUTLEADINDUCTANCE
Of equal importance to Supply Bypassing and Grounding are
issues related to the Output Lead Inductance. Every effort
should be made to keep the leads between the driver and it’s
load as short and wide as possible. If the driver must be placed
farther than 2” from the load, then the output leads should be
treated as transmission lines. In this case, a twisted-pair
should be considered, and the return line of each twisted pair
should be placed as close as possible to the ground pin of the
driver, and connect directly to the ground terminal of the load.
A TTL high, V
TTLHIGH=>~2.4V, or a 5V CMOS high,
V
5VCMOSHIGH=~>3.5V, applied to the EN input of the circuit in
Figure 29 will cause Q1 to be biased off. This results in Q1
collector being pulled up by R3 to V
CC=15V, and provides a
high voltage CMOS logic high output. The high voltage CMOS
logical EN output applied to the IXDD430 EN input will enable
it, allowing the gate driver to fully function as an 30 Amp
output driver.
The total component cost of the circuit in Figure 29 is less
than $0.10 if purchased in quantities >1K pieces. It is
recommended that the physical placement of the level
translator circuit be placed close to the source of the TTL or
CMOS logic circuits to maximize noise rejection.
Figure 29 - TTL to High Voltage CMOS Level Translator
TTL to High Voltage CMOS Level Translation
(IXDD430 Only)
The enable (EN) input to the IXDD430 is a high voltage
CMOS logic level input where the EN input threshold is ½
V
CC, and may not be compatible with 5V CMOS or TTL input
levels. The IXDD430 EN input was intentionally designed
for enhanced noise immunity with the high voltage CMOS
logic levels. In a typical gate driver application, V
CC =15V
and the EN input threshold at 7.5V, a 5V CMOS logical high
input applied to this typical IXDD430 application’s EN input
will be misinterpreted as a logical low, and may cause
undesirable or unexpected results. The note below is for
optional adaptation of TTL or 5V CMOS levels.
A TTL or 5V CMOS logic low, V
TTLLOW=~<0.8V, input applied to the
Q1 emitter will drive it on. This causes the level translator
output, the Q1 collector output to settle to V
CESATQ1 +
V
TTLLOW=<~2V, which is sufficiently low to be correctly interpreted
as a high voltage CMOS logic low (<1/3V
CC=5V for VCC =15V given
in the IXDD430 data sheet.)
The circuit in Figure 29 alleviates this potential logic level
misinterpretation by translating a TTL or 5V CMOS logic
input to high voltage CMOS logic levels needed by the
IXDD430 EN input. From the figure, V
CC is the gate driver
power supply, typically set between 8V to 20V, and V
DD is
the logic power supply, typically between 3.3V to 5.5V.
Resistors R1 and R2 form a voltage divider network so
that the Q1 base is positioned at the midpoint of the
expected TTL logic transition levels.
Q1
2N3904
R1
10K
R2
10K
R3
10K
Vdd
EN
Vcc (From gate driver
power supply)
power supply)
5V CMOS or TTL input
(From logic
(To IXDD430 EN input)
CMOS EN output
High Voltage



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