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IXDN430 数据表(PDF) 1 Page - IXYS Corporation |
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IXDN430 数据表(HTML) 1 Page - IXYS Corporation |
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1 / 12 page ![]() First Release Copyright © IXYS CORPORATION 2004 Ordering Information General Description TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhigh current gate drivers specifically designed to drive MOSFETs and IGBTs to their minimum switching time and maximum practical frequency limits. The IXD_430 can source and sink 30A of peak current while producing voltage rise and fall times of less than 30ns. The input of the drivers are compatible with TTL or CMOS and are fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction/current shoot-through is virtually eliminated in all configurations. Their features and wide safety margin in operating voltage and power make the drivers unmatched in performance and value. The IXD_430 incorporates a unique ability to disable the output under fault conditions. The standard undervoltage lockout is at 12.5V which can also be set to 8.5V in the IXDS430SI. When a logical low is forced into the Enable inputs, both final output stage MOSFETs (NMOS and PMOS) are turned off. As a result, the output of the IXDD430 enters a tristate mode and enables a Soft Turn-Off of the MOSFET when a short circuit is detected. This helps prevent damage that could occur to the MOSFET if it were to be switched off abruptly due to a dv/dt over-voltagetransient. The IXDN430 is configured as a noninverting gate driver, and the IXDI430 is an inverting gate driver. The IXDS430 can be configured eitherasanoninvertingorinvertingdriver.TheIXD_430areavailable in the standard 28-pin SIOC (SI-CT), 5-pin TO-220 (CI), and in the TO-263 (YI) surface mount packages. CT or 'Cool Tab' for the 28- pin SOIC package refers to the backside metal heatsink tab. Features • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 30A Peak • Wide Operating Range: 8.5V to 35V • Under Voltage Lockout Protection • Ability to Disable Output under Faults • High Capacitive Load Drive Capability: 5600 pF in <25ns • Matched Rise And Fall Times • Low Propagation Delay Time • Low Output Impedance • Low Supply Current Applications • Driving MOSFETs and IGBTs • Motor Controls • LineDrivers • Pulse Generators • Local Power ON / OFF Switch • Switch Mode Power Supplies (SMPS) • DC to DC Converters • PulseTransformerDriver • Limiting di/dt Under Short Circuit • Class D Switching Amplifiers P a rt N u m b e r P a c k a g e Type Te m p . R a nge C onfigura tion IX D D 430Y I 5-pin T O -2 6 3 IX D D 430C I 5-pin T O -2 2 0 -55°C to +1 25° N o n In ve rtin g w ith E nable IX D I430Y I 5-pin T O -2 6 3 IX D I430C I 5-pin T O -2 2 0 -55°C to +1 25° In ve rtin g IX D N 430Y I 5-pin T O -2 6 3 IX D N 430C I 5-pin T O -2 2 0 -55°C to +1 25° N on In ve rtin g IX D S 430S I 28-pin S O IC -55°C to +1 25° In ve rtin g / N o n In ve rtin g w ith E nable and U V S E L 30 Amp Low-Side Ultrafast MOSFET / IGBT Driver IXDN430 / IXDI430 / IXDD430 / IXDS430 DS99045B(8/04) |
类似零件编号 - IXDN430 |
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类似说明 - IXDN430 |
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