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ADRF5050BCCZN-R7 数据表(PDF) 1 Page - Analog Devices

部件名 ADRF5050BCCZN-R7
功能描述  Nonreflective, Silicon SP4T Switch, 100 MHz to 20 GHz
PDF  14 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADRF5050BCCZN-R7 数据表(HTML) 1 Page - Analog Devices

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Data Sheet
ADRF5050
Nonreflective, Silicon SP4T Switch, 100 MHz to 20 GHz
Rev. 0
DOCUMENT FEEDBACK
TECHNICAL SUPPORT
Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog
Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to
change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
FEATURES
Ultrawideband frequency range: 100 MHz to 20 GHz
Nonreflective 50 Ω design
Low insertion loss
0.9 dB typical to 6 GHz
1.00 dB typical to 12 GHz
1.20 dB typical to 20 GHz
High isolation Between RFx and RFx
54 dB typical to 6 GHz
50 dB typical to 12 GHz
47 dB typical to 20 GHz
High input linearity
P0.1dB: 34 dBm typical
IP3: 55 dBm typical
High RF power handling
Through path: 33 dBm up to 20 GHz
Terminated path: 18 dBm up to 20 GHz
Switching on and off time: 55 ns
0.1 dB settling time (50% VCTRL to 0.1 dB final RFOUT): 80 ns
All off state control
Logic select control
Single-supply operation with derated power handling
No low frequency spurs
24-terminal, 3 mm × 3 mm, land grid array (LGA) package
Pin compatible with the ADRF5042 and ADRF5043
APPLICATIONS
Test instrumentation
Military radios, radars, and electronic counter measures (ECMs)
Microwave radios and very small aperture terminals (VSATs)
FUNCTIONAL BLOCK DIAGRAM
Figure 1. Functional Block Diagram
GENERAL DESCRIPTION
The ADRF5050 is a nonreflective SP4T switch manufactured in
a silicon on insulator (SOI) process. The ADRF5050 operates
from 100 MHz to 20 GHz with insertion loss less than 1.20 dB
and isolation higher than 47 dB. The device has RF input power
handling capability of 33 dBm for through paths.
The ADRF5050 operates with a dual-supply voltage +3.3 V and
−3.3 V. The device can also operate with a single positive supply
voltage (VDD) applied while the negative supply pin (VSS) is tied
to ground. The single-supply operation condition requires lower
operating power while the excellent small signal performance is
maintained (see Table 2).
The ADRF5050 employs complimentary metal-oxide semiconductor
(CMOS)- and low voltage transistor to transistor logic (LVTTL)-com-
patible controls. The device has enable and logic select controls to
feature all off state and port mirroring, respectively.
The ADRF5050 is pin compatible with the ADRF5042 and
ADRF5043.
The ADRF5050 comes in a 24-terminal, 3 mm × 3 mm, RoHS
compliant, land grid array (LGA) package and can operate from
−40°C to +105°C.


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