M95640-R datasheet(36/53 Pages) STMICROELECTRONICS

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DC and AC parameters

M95640-W M95640-R M95640-DF

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DocID16877 Rev 19

Table 16. DC characteristics (M95640-R, device grade 6)

Symbol

Parameter

Test conditions in addition to those

defined in Table 11(1)

Min.

Max.

Unit

ILI

Input leakage

current

VIN = VSS or VCC

-± 2

µA

ILO

Output leakage

current

S = VCC, voltage applied on Q = VSS or VCC

-± 2

µA

ICC

Supply current

(Read)

VCC = 1.8 V, C = 0.1 VCC or 0.9 VCC,

at 2 MHz, Q = open

-2

VCC = 1.8 V, C = 0.1 VCC or 0.9 VCC,

at 5 MHz, Q = open

-2(2)

ICC0(3)

Supply current

(Write)

VCC = 1.8 V, during tW, S = VCC

-5

ICC1

Supply current

(Standby)

VCC = 1.8 V, S = VCC, VIN = VSS or VCC

-1

µA

VIL

Input low voltage

1.8 V

≤VCC < 2.5 V

–0.45

0.25 VCC

VIH

Input high voltage

1.8 V

≤VCC < 2.5 V

0.75 VCC

VCC+1

VOL

Output low voltage

IOL = 0.15 mA, VCC = 1.8 V

0.3

VOH

Output high voltage

IOH = –0.1 mA, VCC = 1.8 V

0.8 VCC

-V

1. If the application uses the M95640-R device at 2.5 V

< VCC< 5.5 V and -40 °C < TA < +85 °C, please refer to Table 15: DC

characteristics (M95640-W, device grade 6), rather than to the above table.

2. Only for M95640 devices identified by process letter K.

3. Characterized only, not tested in production.

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