M95640-R datasheet(37/53 Pages) STMICROELECTRONICS

37 / 53 page

DocID16877 Rev 19

37/53

M95640-W M95640-R M95640-DF

DC and AC parameters

Table 17. DC characteristics (M95640-DF, device grade 6)

Symbol

Parameter

Test conditions in addition to those

defined in Table 10(1)

Min.

Max.

Unit

ILI

Input leakage

current

VIN = VSS or VCC

-± 2

µA

ILO

Output leakage

current

S = VCC, voltage applied on Q = VSS or VCC

-± 2

µA

ICC

Supply current

(Read)

VCC = 1.7 V, max clock frequency (fC),

C = 0.1 VCC/0.9 VCC, Q = open

-2

VCC = 1.7 V, fC = 5 MHz,

C = 0.1 VCC/0.9 VCC, Q = open

-2

ICC0(2)

Supply current

(Write)

VCC = 1.7 V, during tW, S = VCC

-5

ICC1

Supply current

(Standby)

VCC = 1.7 V, S = VCC, VIN = VSS or VCC

-1

µA

VIL

Input low voltage

1.7 V

≤VCC < 2.5 V

–0.45

0.25 VCC

VIH

Input high voltage

1.7 V

≤VCC < 2.5 V

0.75 VCC

VCC+1

VOL

Output low voltage

IOL = 0.15 mA, VCC = 1.7 V

0.3

VOH

Output high voltage

IOH = –0.1 mA, VCC = 1.7 V

0.8 VCC

-V

1. If the application uses the M95640-DF devices at 2.5 V

≤ VCC ≤ 5.5 V and –40 °C ≤TA ≤ +85 °C, please refer to Table 15:

DC characteristics (M95640-W, device grade 6), rather than to the above table.

2. Characterized only, not tested in production.

M95640-R 数据表(PDF) 37 Page - STMicroelectronics

M95640-R 数据表(HTML) 37 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53

数据表下载

链接网址

M95640-R 数据表(PDF) 37 Page - STMicroelectronics

M95640-R 数据表(HTML) 37 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53

数据表 下载

链接网址

数据表下载