Figure 7. Relative variation of static dV/dt immunity

versus gate-cathode resistance

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.1

1.0

10.0

R

( k )

GK

Ω

dV/dt[R

] / dV/dt[

= 1k ]

GK

Ω

RGK

Tj = 125°C

V = 0.67 x V

D

DRM

Typical values

Figure 8. Relative variation of dV/dt immunity versus gate-

cathode capacitance

0

1

2

3

4

5

6

7

0

2

4

6

8

10

C

(nF)

GK

dV/dt[C

] / dV/dt[

= 1k , CGK = 0 F]

GK

Ω

RGK

T

V = 0.67 xV

= 125°C

R = 1k

D

DRM

GK

j

Ω

Typical values

Figure 9. Surge peak on-state current versus number of

cycles

I

(A)

TSM

1

1 0

100

1000

0

1

2

3

4

5

6

7

8

Number of cycles

Non repetitive

T initial = 25°C

j

Repetitive

T

= 36 °C

amb

t = 10ms

p

One cycle

Figure 10. Non-repetitive surge peak on-state current for

sinusoidal pulse (tp< 10 ms)

100.0

10.0

1.0

0.1

0.01

0.10

1.00

10.00

T initial = 25°C

j

ITSM

t (ms)

p

ITSM(A)

Figure 11. On-state characteristics (maximum values)

I

(A)

TM

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

1E+1

1E+0

1E-1

1E-2

V = 0.95 V

R = 600 m

T max.:

j

t0

d

Ω

V

(V)

TM

Tj = max

T = 25 °C

j

Maximum values

P0109DA

Characteristics (curves)

DS13154 - Rev 2

page 5/9