1.1

Characteristics (curves)

Figure 1. Maximum power dissipation versus on-state

RMS current (full cycle)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

P(W)

α = 180°

360°

α

I

(A)

T(AV)

Figure 2. Average and DC on-state current versus lead

temperature

0

25

50

75

100

125

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

I

(A)

T(AV)

T

(°C)

lead

α = 180° (TO-92)

D.C. (TO-92)

Figure 3. Average and DC on-state current versus ambient

temperature

0

2 5

5 0

7 5

100

125

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

I

(A)

T(AV)

T

(°C)

amb

α = 180° (TO-92)

D.C. (TO-92)

Figure 4. Relative variation of thermal impedance versus

pulse duration

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

0.01

0.10

1.00

K=[Z

/R

th(j-a)

th(j-a) ]

t (s)

p

TO-92

Figure 5. Relative variation of holding current versus

gate-cathode resistance

1E-2

1E-1

1E+0

1E+1

0

2

4

6

8

10

12

14

16

18

20

R

( k )

GK

Ω

I [ R

] / I [

H

GK

H RGK = 1 kΩ]

Tj = 25°C

Typical values

Figure 6. Relative variation of gate voltage and gate,

holding and latching current versus junction temperature

0.0

1.0

2.0

3.0

4.0

5.0

6.0

-40

-20

0

20

40

60

80

100

120

140

IGT, V GT, I H, I L[Tj ] / IGT, V GT, I H, I L[Tj =25 ° C]

IH and IL

(RGK =1 KΩ)

VGT

IGT

T (°C)

j

Relative variations

Typical values

P0109DA

Characteristics (curves)

DS13154 - Rev 2

page 4/9