1

Characteristics

Table 1. Absolute maximum ratings (limiting values)

Symbol

Parameters

Value

Unit

IT(RMS)

On-state RMS current (180° conduction angle)

TL = 55 °C

0.8

A

IT(AV)

Average on-state current (180° conduction angle)

0.5

A

ITSM

Non repetitive surge peak on-state current,

Tj initial = 25 °C

tp = 8.3 ms

Tj = 25 °C

8

A

tp = 10 ms

7

I2t

I2t value for fusing

tp = 10 ms

Tj = 25 °C

0.24

A2s

dl/dt

Critical rate of rise of on-state current

IG = 2 x IGT , tr ≤ 100 ns

F = 60 Hz

Tj = 25 °C

50

A/µs

VDRM / VRRM Repetitive peak off-state voltage

Tj = 125 °C

400

V

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

1

A

PG(AV)

Average gate power dissipation

Tj = 125 °C

0.1

W

Tstg

Storage junction temperature range

-40 to +150

°C

Tj

Operating junction temperature range

-40 to +125

°C

Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Parameters

Value

Unit

IGT

VD = 12 V, RL = 33 Ω

Max.

1

µA

VGT

Max.

0.8

V

VGD

VD = VDRM, RL = 3.3 kΩ, RGK = 1 kΩ, Tj = 125 °C

Min.

0.1

V

VRG

IRG = 10 µA

Min.

8

IH

IT = 50 mA, RGK = 1 kΩ

Max.

5

mA

IL

IG = 1.2 IGT, RGK = 1 kΩ

Max.

6

mA

dV/dt

VD = 67 % VDRM, RGK = 1 kΩ, Tj = 125 °C

Min.

75

V/µs

Table 3. Static electrical characteristics

Symbol

Test conditions

Tj

Value

Unit

VT

ITM = 1.6 A, tp = 380 µs

25 °C

Max.

1.95

V

VTO

Threshold on-state voltage

125 °C

Max.

0.95

V

Rd

Dynamic resistance

125 °C

Max.

600

mΩ

IDRM

IRRM

VD = VDRM

VR = VRRM

25 °C

Max.

1

µA

125 °C

0.1

mA

P0109DA

Characteristics

DS13154 - Rev 2

page 2/9