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STP3NK60Z 数据表(PDF) 1 Page - STMicroelectronics |
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STP3NK60Z 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 34 page ![]() 1 2 3 TO-220 TAB 1 2 3 TO-220FP 1 3 TAB D2PAK DPAK 1 3 2 TAB TAB 1 2 3 IPAK D(2, TAB) G(1) S(3) AM01475V1 Features Order codes VDS RDS(on) max. ID Package STB3NK60ZT4 600 V 3.6 Ω 2.4 A D2PAK STD3NK60Z-1 IPAK STD3NK60ZT4 DPAK STP3NK60Z TO-220 STP3NK60ZFP TO-220FP • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STB3NK60ZT4 STD3NK60Z-1 STD3NK60ZT4 STP3NK60Z STP3NK60ZFP N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4 STP3NK60Z, STP3NK60ZFP Datasheet DS2912 - Rev 6 - August 2018 For further information contact your local STMicroelectronics sales office. www.st.com |
类似零件编号 - STP3NK60Z |
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类似说明 - STP3NK60Z |
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