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STP3NK60Z 数据表(PDF) 2 Page - STMicroelectronics

部件名 STP3NK60Z
功能描述  N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages
PDF  34 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP3NK60Z 数据表(HTML) 2 Page - STMicroelectronics

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1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
D2PAK, TO-220
TO-220FP
DPAK, IPAK
VDS
Drain-source voltage
600
V
VGS
Gate-source voltage
±30
V
ID
Drain current (continuous) at TC = 25 °C
2.4
2.4 (1)
2.4
A
ID
Drain current (continuous) at TC = 100 °C
1.51
1.51 (1)
1.51
A
IDM (2)
Drain current (pulsed)
9.6
9.6 (1)
9.6
A
PTOT
Total dissipation at TC = 25 °C
45
20
45
W
ESD
Gate-source human body model
(R = 1.5 kΩ, C = 100 pF)
2.1
kV
VISO
Insulation withstand voltage (RMS)
from all three leads to external heat-sink
(t = 1 s, TC = 25 °C)
2.5
kV
dv/dt (3)
Peak diode recovery voltage slope
4.5
V/ns
Tj
Operating junction temperature range
-55 to 150
°C
Tstg
Storage temperature range
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 2.4 A, di/dt ≤ 200 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Table 2. Thermal data
Symbol
Parameter
Value
Unit
D2PAK
TO-220
TO-220FP
DPAK
IPAK
Rthj-case
Thermal resistance junction-case
2.78
6.25
2.78
°C/W
Rthj-amb
Thermal resistance junction-
ambient
62.5
100
°C/W
Rthj-pcb (1)
Thermal resistance junction-pcb
35
50
°C/W
1. When mounted on an 1-inch² FR-4, 2oz Cu board.
Table 3. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-
repetitive
(pulse width limited by Tj Max)
2.4
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
150
mJ
STB3NK60ZT4,STD3NK60Z-1,STD3NK60ZT4,STP3NK60Z,STP3NK60ZFP
Electrical ratings
DS2912 - Rev 6
page 2/34



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