2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS = 0 V

600

V

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 600 V

1

µA

VGS = 0 V, VDS = 600 V, TC = 125 °C (1)

50

µA

IGSS

Gate body leakage

current

VDS = 0 V, VGS = ±20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 50 µA

3

3.75

4.5

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 1.2 A

3.2

3.6

Ω

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz, VGS = 0 V

-

311

-

pF

Coss

Output capacitance

43

Crss

Reverse transfer

capacitance

8

Coss eq. (1)

Equivalent output

capacitance

VDS = 0 to 480 V, VGS = 0 V

-

26

-

pF

Qg

Total gate charge

VDD = 480 V, ID = 2.4 A, VGS = 0 to 10 V

(see Figure 16. Test circuit for gate charge

behavior)

-

11.8

-

nC

Qgs

Gate-source charge

2.6

-

Qgd

Gate-drain charge

6.4

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 1.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 15. Test circuit for resistive load

switching times and Figure 20. Switching

time waveform)

-

9

-

ns

tr

Rise time

14

td(off)

Turn-off delay time

19

tf

Fall time

14

STB3NK60ZT4,STD3NK60Z-1,STD3NK60ZT4,STP3NK60Z,STP3NK60ZFP

Electrical characteristics

DS2912 - Rev 6

page 3/34