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STP80NF10FP 数据表(PDF) 5 Page - STMicroelectronics |
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STP80NF10FP 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 12 page ![]() STP80NF10FP Electrical characteristics 5/12 Table 5. Switching times Symbol Parameter Test condictions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 50V, ID= 40A, RG =4.7Ω, VGS=10V (see Figure 14) 40 145 134 115 ns ns ns ns Table 6. Source drain diode Symbol Parameter Test condictions Min Typ. Max Unit ISD Source-drain current 38 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 152 A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 % Forward on voltage ISD = 80A, VGS = 0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80A, VDD = 50V di/dt = 100A/µs,Tj=150°C 155 850 11 ns nC A |
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