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STP80NF10FP 数据表(PDF) 5 Page - STMicroelectronics

部件名 STP80NF10FP
功能描述  N-channel 100V - 0.012Ω - 38A - TO-220FP Low gate charge STripFET™ II Power MOSFET
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP80NF10FP 数据表(HTML) 5 Page - STMicroelectronics

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STP80NF10FP
Electrical characteristics
5/12
Table 5.
Switching times
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 50V, ID= 40A,
RG =4.7Ω, VGS=10V
(see Figure 14)
40
145
134
115
ns
ns
ns
ns
Table 6.
Source drain diode
Symbol
Parameter
Test condictions
Min
Typ.
Max
Unit
ISD
Source-drain current
38
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
152
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage
ISD = 80A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=80A, VDD = 50V
di/dt = 100A/µs,Tj=150°C
155
850
11
ns
nC
A



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