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STP80NF10FP 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP80NF10FP
功能描述  N-channel 100V - 0.012Ω - 38A - TO-220FP Low gate charge STripFET™ II Power MOSFET
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP80NF10FP 数据表(HTML) 3 Page - STMicroelectronics

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STP80NF10FP
Electrical ratings
3/12
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
100
V
VGS
Gate- source voltage
±20
V
ID
(1)
1.
Limited by Package
Drain current (continuous) at TC = 25°C
38
A
ID
(1)
Drain current (continuous) at TC = 100°C
27
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
152
A
PTOT
Total dissipation at TC = 25°C
45
W
Derating factor
0.3
W/°C
dv/dt (3)
3.
ISD <80A, di/dt < 300A/µs, VDD=80% V(BR)DSS
Peak diode recovery voltage slope
9
V/ns
EAS
(4)
4.
Starting Tj = 25°C, ID = 80A, VDD = 50V
Single pulse avalanche energy
350
mJ
VISO
Insulation withstand voltage (DC)
2500
V
Tstg
Tj
Storage temperature
Operating junction temperature
-55 to 175
°C
Table 2.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case Max
3.33
°C/W
Rthj-amb
Thermal resistance junction-ambient Max
62.5
°C/W
Tl
Maximum lead temperature for soldering purpose
300
°C



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