STP80NF10FP datasheet(4/12 Pages) STMICROELECTRONICS

部件名	STP80NF10FP

功能描述	N-channel 100V - 0.012Ω - 38A - TO-220FP Low gate charge STripFET™ II Power MOSFET

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical characteristics

STP80NF10FP

4/12

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test condictions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250µA, VGS = 0

100

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating @125°C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ±20V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 40A

0.012

0.015

Ω

Table 4.

Dynamic

Symbol

Parameter

Test condictions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration = 300 µs, duty cycle 1.5 %

Forward transconductance

VDS =25V , ID =40 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1 MHz,

VGS = 0

4300

600

230

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 80V, ID = 80A,

VGS = 10V

140

189

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