Nexperia

BC55PA series

60 V, 1 A NPN medium power transistors

8. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

60

V

VCEO

collector-emitter voltage

open base

-

60

V

VEBO

emitter-base voltage

open collector

-

5

V

IC

collector current

-

1

A

ICM

peak collector current

single pulse; tp ≤ 1 ms

-

2

A

IB

base current

-

0.3

A

IBM

peak base current

single pulse; tp ≤ 1 ms

-

0.3

A

[1]

-

0.42

W

[2]

-

0.83

W

[3]

-

1.10

W

[4]

-

0.81

W

Ptot

total power dissipation

Tamb ≤ 25 °C

[5]

-

1.65

W

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm2.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 6 cm2.

[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.

[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.

Tamb (°C)

-75

175

125

25

75

-25

006aac676

1.0

0.5

1.5

2.0

Ptot

(W)

0.0

(1)

(2)

(3)

(4)

(5)

(1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2

(2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm2

(3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm2

(4) FR4 PCB, 4-layer copper, standard footprint

(5) FR4 PCB, single-sided copper, standard footprint

Fig. 1. Power derating curves SOT89

BC55PA_SER

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© Nexperia B.V. 2022. All rights reserved

Product data sheet

Rev. 9 — 1 July 2022

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