Nexperia

BC55PA series

60 V, 1 A NPN medium power transistors

10. Characteristics

Table 8. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max Unit

V(BR)CBO

collector-base

breakdown voltage

IC = 100 µA; IE = 0 ; Tamb = 25 °C

60

-

-

V

V(BR)CEO

collector-emitter

breakdown voltage

IC = 2 µA; IB = 0 A; Tamb = 25 °C

60

-

-

V

V(BR)EBO

emitter-base

breakdown voltage

IC = 0 A; IE = 100 µA

5

-

-

V

VCB = 30 V; IE = 0 A; Tamb = 25 °C

-

-

100

nA

ICBO

collector-base

cut-off current

VCB = 30 V; IE = 0 A; Tj = 150 °C

-

-

10

µA

IEBO

emitter-base

cut-off current

VEB = 5 V; IC = 0 A; Tamb = 25 °C

-

-

100

nA

DC current gain

VCE = 2 V; IC = 5 mA; Tamb = 25 °C

[1] 63

-

-

VCE = 2 V; IC = 150 mA; Tamb = 25 °C

[1] 63

-

250

BC55PA

VCE = 2 V; IC = 500 mA; Tamb = 25 °C

[1] 40

-

-

VCE = 2 V; IC = 5 mA; Tamb = 25 °C

[1] 63

-

-

VCE = 2 V; IC = 150 mA; Tamb = 25 °C

[1] 63

-

160

BC55-10PA

VCE = 2 V; IC = 500 mA; Tamb = 25 °C

[1] 40

-

-

VCE = 2 V; IC = 5 mA; Tamb = 25 °C

[1] 63

-

-

VCE = 2 V; IC = 150 mA; Tamb = 25 °C

[1] 100

-

250

hFE

BC55-16PA

VCE = 2 V; IC = 500 mA; Tamb = 25 °C

[1] 40

-

-

hFE

DC current gain

VCE = 2 V; IC = 5 mA; Tamb = 25 °C

[1] 63

-

-

hFE

DC current gain

VCE = 2 V; IC = 500 mA; Tamb = 25 °C

[1] 40

-

-

VCEsat

collector-emitter

saturation voltage

IC = 500 mA; IB = 50 mA; Tamb = 25 °C

[1] -

-

0.5

V

VBE

base-emitter voltage

VCE = 2 V; IC = 500 mA; Tamb = 25 °C

[1] -

-

1

V

Cc

collector capacitance

VCB = 10 V; IE = ie = 0 A; f = 1 MHz;

Tamb = 25 °C

-

6

-

pF

fT

transition frequency

VCE = 5 V; IC = 50 mA; f = 100 MHz;

Tamb = 25 °C

100

180

-

MHz

[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02

BC55PA_SER

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Product data sheet

Rev. 9 — 1 July 2022

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