Nexperia

BC55PA series

60 V, 1 A NPN medium power transistors

006aac691

100

200

300

hFE

0

IC (A)

10- 4

10

1

10- 3

10- 1

10- 2

(1)

(2)

(3)

VCE = 2 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

Fig. 7. DC current gain as a function of collector

current; typical values

VCE (V)

0

2.0

1.6

0.8

1.2

0.4

006aaa084

0.8

0.4

1.2

1.6

IC

(A)

0

25

20

15

10

5

IB (mA) = 50 45 40 35 30

Tamb = 25 °C

Fig. 8. Collector current as a function of collector-

emitter voltage; typical values

006aac692

0.4

0.8

1.2

VBE

(V)

0.0

IC (mA)

10- 1

104

103

1

102

10

(1)

(2)

(3)

VCE = 2 V

(1) Tamb = -55 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 9. Base-emitter voltage as a function of collector

current; typical values

006aac693

IC (mA)

10- 1

104

103

1

102

10

10- 1

1

VCEsat

(V)

10- 2

(1)

(2)

(3)

IC/IB = 10

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

Fig. 10. Collector-emitter saturation voltage as a

function of collector current; typical values

BC55PA_SER

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Product data sheet

Rev. 9 — 1 July 2022

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