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PRELIMINARY DATA

May 2000

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

M28W320CT

M28W320CB

32 Mbit (2Mb x16, Boot Block) Low Voltage Flash Memory

s

SUPPLY VOLTAGE

Read

Program

s

ACCESS TIME

– 2.7V to 3.6V: 90ns

– 2.7V to 3.6V: 100ns

s

PROGRAMMING TIME:

–10

µs typical

– Double Word Programming Option

s

PROGRAM/ERASE CONTROLLER (P/E.C.)

s

COMMON FLASH INTERFACE

s

MEMORY BLOCKS

– Parameter Blocks (Top or Bottom location)

– Main Blocks

s

BLOCK PROTECTION UNPROTECTION

– All Blocks protected at Power Up

– Any combination of blocks can be protected

– WP for block locking

s

SECURITY

– 64-bit user Programmable OTP cells

– 64-bit unique device identifier

– One Parameter Block Permanently Lockable

s

AUTOMATIC STAND-BY MODE

s

PROGRAM and ERASE SUSPEND

s

100,000 PROGRAM/ERASE CYCLES per

BLOCK

s

20 YEARS of DATA RETENTION

– Defectivity below 1ppm/year

s

ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M28W320CT: 88BAh

– Bottom Device Code, M28W320CB: 88BBh

Figure 1. Logic Diagram

AI03521

21

A0-A20

W

DQ0-DQ15

VDD

M28W320CT

M28W320CB

E

VSS

16

G

RP

WP

VDDQ VPP

TSOP48 (N)

12 x 20mm

µBGA47 (GB)

8 x 6 solder balls

µBGA